sot - 89 - 3l 1. base 2. collector 3. emitter transistor (npn) features ? small flat p ackage ? high dc current gain ? low v ce(sat) ? large current capacity applications ? lf amplifiers, various drivers, muting circuit marking:cf maximum ratings (t a =25 unless otherwise noted) electrical characteristics ( t a =25 unless otherwise specified ) p arameter symbol test conditions min typ max unit collector - base bre akdown voltage v (br) cbo i c = 1 0 a ,i e =0 30 v c ollector - emitter breakdown voltage v (br) ceo i c = 1 ma , i b =0 25 v emitter - base breakdown voltage v (br) e b o i e = 1 0 a ,i c =0 1 5 v collector cut - off current i cbo v cb = 20 v,i e =0 0. 1 a emitter cut - off current i ebo v e b = 10 v,i c =0 0. 1 a h fe (1) v ce = 5 v , i c = 5 00m a 800 320 0 dc current gain h fe (2) v ce = 5 v , i c = 1 0m a 600 collector - emitter saturation voltage v ce(sat) i c = 500m a ,i b = 10 m a 0.5 v base - emitter saturation voltage v b e(sat) i c =500m a ,i b = 10m a 1.2 v transition frequency f t v ce = 10 v,i c = 50 m a 220 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1mhz 17 pf symbol parameter value unit v cbo collector - b ase v oltage 30 v v ceo collector - e mitter v oltage 25 v v ebo emitter - b ase v oltage 15 v i c collector c urrent 1.2 a p c collector p ower d issipation 500 m w r ja thermal resistance from j unction to ambient 250 / w t j junction t emperature 150 t stg s torage t emperature - 55~+150 1 www.htsemi.com semiconductor jinyu 2s c 3650
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